JPH0730693Y2 - シリコン単結晶引上げ用石英ルツボ - Google Patents
シリコン単結晶引上げ用石英ルツボInfo
- Publication number
- JPH0730693Y2 JPH0730693Y2 JP1989125066U JP12506689U JPH0730693Y2 JP H0730693 Y2 JPH0730693 Y2 JP H0730693Y2 JP 1989125066 U JP1989125066 U JP 1989125066U JP 12506689 U JP12506689 U JP 12506689U JP H0730693 Y2 JPH0730693 Y2 JP H0730693Y2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- inclined surface
- single crystal
- silicon single
- quartz crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010453 quartz Substances 0.000 title claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 12
- 229910052710 silicon Inorganic materials 0.000 title claims description 12
- 239000010703 silicon Substances 0.000 title claims description 12
- 239000013078 crystal Substances 0.000 title claims description 11
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000001556 precipitation Methods 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1989125066U JPH0730693Y2 (ja) | 1989-10-27 | 1989-10-27 | シリコン単結晶引上げ用石英ルツボ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1989125066U JPH0730693Y2 (ja) | 1989-10-27 | 1989-10-27 | シリコン単結晶引上げ用石英ルツボ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0363581U JPH0363581U (en]) | 1991-06-20 |
JPH0730693Y2 true JPH0730693Y2 (ja) | 1995-07-12 |
Family
ID=31672952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1989125066U Expired - Fee Related JPH0730693Y2 (ja) | 1989-10-27 | 1989-10-27 | シリコン単結晶引上げ用石英ルツボ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0730693Y2 (en]) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008002668A (ja) * | 2006-06-26 | 2008-01-10 | Kurabo Ind Ltd | 真空断熱材 |
TW201732222A (zh) * | 2015-12-21 | 2017-09-16 | Sumco股份有限公司 | 氧化矽玻璃坩堝、氧化矽玻璃坩堝的製造方法、單晶矽的提拉裝置、錠及同質外延晶圓 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5345318A (en) * | 1976-10-06 | 1978-04-24 | Toshiba Ceramics Co | Process and apparatus for preparing glass vessel and the like of high silica content |
JPH0616926Y2 (ja) * | 1986-02-05 | 1994-05-02 | 信越石英株式会社 | 単結晶引き上げ用石英ガラスルツボ |
JPS63319288A (ja) * | 1987-06-23 | 1988-12-27 | Shin Etsu Handotai Co Ltd | 鍔付石英るつぼ |
-
1989
- 1989-10-27 JP JP1989125066U patent/JPH0730693Y2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0363581U (en]) | 1991-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN208899038U (zh) | 一种光伏用排气石墨坩埚装置 | |
JPH0730693Y2 (ja) | シリコン単結晶引上げ用石英ルツボ | |
JP2688137B2 (ja) | シリコン単結晶の引上げ方法 | |
JPS60251191A (ja) | 高解離圧化合物単結晶成長方法 | |
JPH03115188A (ja) | 単結晶製造方法 | |
JPH11199371A (ja) | 単結晶育成装置用カーボンヒータ | |
JPH0616926Y2 (ja) | 単結晶引き上げ用石英ガラスルツボ | |
JP4509258B2 (ja) | 単結晶の成長装置および製造方法 | |
JP2864058B2 (ja) | シリコン単結晶引上げ用石英ルツボ | |
JP2546746Y2 (ja) | 垂直ブリッジマン法用るつぼ | |
JPH054358B2 (en]) | ||
JPS6126593A (ja) | シリコン単結晶引上用カ−ボンルツボ | |
JP2706272B2 (ja) | 化合物半導体単結晶の成長方法 | |
JP2713986B2 (ja) | 酸化物単結晶の製造装置 | |
JPH0519337Y2 (en]) | ||
JPH0631200B2 (ja) | 単結晶の育成方法 | |
JPS58121377U (ja) | シリコン単結晶引上げ装置用黒鉛部品 | |
JPH0243718B2 (en]) | ||
RU1299016C (ru) | Устройство дл получени монокристаллических отливок из жаропрочных сплавов | |
JPS52138095A (en) | Growth of sapphire single crystal | |
JPH04106367U (ja) | 半導体単結晶引上装置の黒鉛ルツボ | |
JPH04362087A (ja) | 単結晶引上装置 | |
JPS63303886A (ja) | 単結晶引上げ装置における酸化シリコン排出装置 | |
JPH05170594A (ja) | 単結晶製造方法 | |
Kim et al. | Single-crystal growth of cubic zirconia by skull method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |